Vishay Introduces New 40V MOSFET SiJK140E with Advanced Performance
Recently, Vishay Intertechnology, Inc. (NYSE: VSH) announced the launch of the new 40 V TrenchFET Gen IV n-channel power MOSFET in PowerPAK 10x12 package, the SiJK140E, which has excellent on-resistance and can provide higher efficiency and power density for industrial applications. Compared with competitive devices with the same footprint, the Vishay Siliconix SiJK140E has a 32% lower on-resistance and 58% lower on-resistance than a 40 V MOSFET in a TO-263-7L package. The recently released device has a typical on-resistance as low as 0.34 m at 10 V, minimizing power losses caused by conduction, thereby improving efficiency, while improving thermal performance through a typical RthJC as low as 0.21 °C/W. The SiJK140E allows designers to achieve the same low on-resistance using one device instead of two devices in parallel, which improves reliability and extends mean time between failures (MTBF). The MOSFET uses a bond-wireless (BWL) design to minimize parasitic inductance while maximi...