IKW25T120FKSA1 IGBTs Datasheet Inventory & Pricing

IKW25T120FKSA1 Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode


Product Overview

The IKW25T120 is a Low Loss IGBT in TrenchStop® and field-stop technology with soft, fast recovery anti-parallel emitter controlled HE diode. The TrenchStop® IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of TrenchStop®-cell and field-stop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-ON losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.


*Lowest Vce (sat) drop for lower conduction losses

*Low switching losses

*Easy parallel switching capability due to positive temperature coefficient in Vce (sat)

*Very soft, fast recovery anti-parallel emitter controlled HE diode

*High ruggedness, temperature stable behaviour

*Low EMI emissions

*Low gate charge

*Very tight parameter distribution

*Highest efficiency - Low conduction and switching losses

*High device reliability

*10µs Short-circuit withstand time



Features

Approx. 1.0V reduced VCE(sat) and 0.5V reduced VF compared to BUP314D

 Short circuit withstand time – 10s

 Designed for :

- Frequency Converters

- Uninterrupted Power Supply

 TrenchStop® and Fieldstop technology for 1200 V applications offers :

- very tight parameter distribution

- high ruggedness, temperature stable behavior

 NPT technology offers easy parallel switching capability due to

positive temperature coefficient in VCE(sat)

 Low EMI

 Low Gate Charge

 Very soft, fast recovery anti-parallel Emitter Controlled HE diode

 Qualified according to JEDEC1 for target applications

 Pb-free lead plating; RoHS compliant





Specifications

Manufacturer: Infineon

Product Category: IGBTs

RoHS: Details

Technology: Si

Package / Case: TO-247-3

Mounting Style: Through Hole

Configuration: Single

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.7 V

Maximum Gate Emitter Voltage: - 20 V, 20 V

Continuous Collector Current at 25 C: 50 A

Pd - Power Dissipation: 190 W

Minimum Operating Temperature: - 40 C

Maximum Operating Temperature: + 150 C

Series: Trenchstop IGBT3

Packaging: Tube

Brand: Infineon Technologies

Gate-Emitter Leakage Current: 600 nA

Product Type: IGBT Transistors

Subcategory: IGBTs

Tradename: TRENCHSTOP

Unit Weight: 0.172842 oz


Applications

Power Management, Alternative Energy, Motor Drive & Control, Consumer Electronics



Datasheet: check here
Inventory: 4082 
Pricing: check here

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